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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSM21156DW6T1G
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5617029NSM21156DW6T1G ImageAMI Semiconductor / ON Semiconductor

NSM21156DW6T1G

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Specifications
  • Part Number
    NSM21156DW6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN PREBIAS/PNP SOT363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSM21156DW6T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 65V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    230mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA, 10V / 220 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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