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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS30101LT1G
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2241906NSS30101LT1G ImageAMI Semiconductor / ON Semiconductor

NSS30101LT1G

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Reference Price(In US Dollars)

In stock
1+
$0.45
10+
$0.362
100+
$0.247
500+
$0.185
1000+
$0.139
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Specifications
  • Part Number
    NSS30101LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 30V 1A SOT-23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSS30101LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 100mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    310mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    NSS30101LT1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    30 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 500mA, 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Current - Collector (Ic) (Max)
    1A
  • Base Part Number
    NSS30101

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