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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSS40301MDR2G
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NSS40301MDR2G

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Reference Price(In US Dollars)

In stock
1+
$0.77
10+
$0.678
100+
$0.52
500+
$0.411
1000+
$0.329
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Specifications
  • Part Number
    NSS40301MDR2G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 40V 3A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSS40301MDR2G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    115mV @ 200mA, 2A
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    8-SOIC
  • Series
    -
  • Power - Max
    653mW
  • Packaging
    Original-Reel®
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    NSS40301MDR2GOSDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    3A
  • Base Part Number
    NSS40301

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