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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NST856BF3T5G
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3703833NST856BF3T5G ImageAMI Semiconductor / ON Semiconductor

NST856BF3T5G

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Reference Price(In US Dollars)

In stock
8000+
$0.066
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Specifications
  • Part Number
    NST856BF3T5G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 65V 0.1A SOT-1123
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NST856BF3T5G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Vce Saturation (Max) @ Ib, Ic
    800mV @ 5mA, 100mA
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-1123
  • Series
    -
  • Power - Max
    290mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-1123
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 290mW Surface Mount SOT-1123
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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