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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSV60100DMTWTBG
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1116390NSV60100DMTWTBG ImageAMI Semiconductor / ON Semiconductor

NSV60100DMTWTBG

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Reference Price(In US Dollars)

In stock
1+
$0.65
10+
$0.571
100+
$0.438
500+
$0.346
1000+
$0.277
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Specifications
  • Part Number
    NSV60100DMTWTBG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    DUAL TRANSISTOR PNP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSV60100DMTWTBG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 100mA, 2A
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    6-WDFN (2x2)
  • Series
    -
  • Power - Max
    2.27W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-WDFN Exposed Pad
  • Other Names
    NSV60100DMTWTBGOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    22 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    155MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 155MHz 2.27W Surface Mount 6-WDFN (2x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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