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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSVEMT1DXV6T1G
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2521564NSVEMT1DXV6T1G ImageAMI Semiconductor / ON Semiconductor

NSVEMT1DXV6T1G

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Reference Price(In US Dollars)

In stock
4000+
$0.114
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Specifications
  • Part Number
    NSVEMT1DXV6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 60V 0.1A SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVEMT1DXV6T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    140MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 6V
  • Current - Collector Cutoff (Max)
    500pA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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