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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NSVF6003SB6T1G
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5352003NSVF6003SB6T1G ImageAMI Semiconductor / ON Semiconductor

NSVF6003SB6T1G

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Reference Price(In US Dollars)

In stock
3000+
$0.247
6000+
$0.23
15000+
$0.221
30000+
$0.213
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Specifications
  • Part Number
    NSVF6003SB6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    RF TRANSISTOR
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVF6003SB6T1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Transistor Type
    NPN
  • Supplier Device Package
    6-CPH
  • Series
    Automotive, AEC-Q101
  • Power - Max
    800mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    NSVF6003SB6T1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Noise Figure (dB Typ @ f)
    3dB @ 1GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    9dB
  • Frequency - Transition
    7GHz
  • Detailed Description
    RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 50mA, 5V
  • Current - Collector (Ic) (Max)
    150mA

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