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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSVMMBT6520LT1G
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1671093NSVMMBT6520LT1G ImageAMI Semiconductor / ON Semiconductor

NSVMMBT6520LT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.161
6000+
$0.151
15000+
$0.14
30000+
$0.139
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Specifications
  • Part Number
    NSVMMBT6520LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 350V 0.5A SOT23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVMMBT6520LT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    225mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    NSVMMBT6520LT1G-ND
    NSVMMBT6520LT1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 50mA, 10V
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA

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