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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVMUN5336DW1T1G
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1306310NSVMUN5336DW1T1G ImageAMI Semiconductor / ON Semiconductor

NSVMUN5336DW1T1G

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Reference Price(In US Dollars)

In stock
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$0.105
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Specifications
  • Part Number
    NSVMUN5336DW1T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    COMPLEMENTARY DIGITAL TRA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVMUN5336DW1T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    100 kOhms
  • Resistor - Base (R1)
    100 kOhms
  • Power - Max
    187mW
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Mounting Type
    Surface Mount
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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