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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSVT30010MXV6T1G
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3894193NSVT30010MXV6T1G ImageAMI Semiconductor / ON Semiconductor

NSVT30010MXV6T1G

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Reference Price(In US Dollars)

In stock
4000+
$0.112
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Specifications
  • Part Number
    NSVT30010MXV6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 30V 0.1A SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVT30010MXV6T1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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