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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSVT3906DXV6T1G
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2211100NSVT3906DXV6T1G ImageAMI Semiconductor / ON Semiconductor

NSVT3906DXV6T1G

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Reference Price(In US Dollars)

In stock
4000+
$0.114
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Specifications
  • Part Number
    NSVT3906DXV6T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 40V 0.2A SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVT3906DXV6T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA, 1V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    200mA

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