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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVTB60BDW1T1G
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5777016NSVTB60BDW1T1G ImageAMI Semiconductor / ON Semiconductor

NSVTB60BDW1T1G

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Reference Price(In US Dollars)

In stock
3000+
$0.109
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Specifications
  • Part Number
    NSVTB60BDW1T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP COMBO SC88-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVTB60BDW1T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 250mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V / 120 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    150mA

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