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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTB35N15T4G
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4935645NTB35N15T4G ImageON Semiconductor

NTB35N15T4G

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Reference Price(In US Dollars)

In stock
800+
$2.255
1600+
$1.902
2400+
$1.807
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Specifications
  • Part Number
    NTB35N15T4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 150V 37A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTB35N15T4G.pdf
  • Voltage - Test
    3200pF @ 25V
  • Voltage - Breakdown
    D2PAK
  • Vgs(th) (Max) @ Id
    50 mOhm @ 18.5A, 10V
  • Vgs (Max)
    10V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    -
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    37A (Ta)
  • Polarization
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    NTB35N15T4GOS
    NTB35N15T4GOS-ND
    NTB35N15T4GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    25 Weeks
  • Manufacturer Part Number
    NTB35N15T4G
  • Input Capacitance (Ciss) (Max) @ Vds
    100nC @ 10V
  • IGBT Type
    ±20V
  • Gate Charge (Qg) (Max) @ Vgs
    4V @ 250µA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 150V 37A (Ta) 2W (Ta), 178W (Tj) Surface Mount D2PAK
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET N-CH 150V 37A D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    150V
  • Capacitance Ratio
    2W (Ta), 178W (Tj)

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