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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD3808N-1G
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2572523NTD3808N-1G ImageAMI Semiconductor / ON Semiconductor

NTD3808N-1G

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Specifications
  • Part Number
    NTD3808N-1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 16V 12A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTD3808N-1G.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    5.8 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    1.3W (Ta), 52W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1660pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    16V
  • Detailed Description
    N-Channel 16V 12A (Ta), 76A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta), 76A (Tc)

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