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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4806N-35G
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4075795NTD4806N-35G ImageAMI Semiconductor / ON Semiconductor

NTD4806N-35G

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Specifications
  • Part Number
    NTD4806N-35G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 11A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTD4806N-35G.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    1.4W (Ta), 68W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2142pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 11.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    11.3A (Ta), 79A (Tc)

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