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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4856N-35G

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AMI Semiconductor / ON Semiconductor

NTD4856N-35G

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Specifications

Part Number

NTD4856N-35G
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 25V 13.3A IPAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

NTD4856N-35G.pdf
Vgs(th) (Max) @ Id

2.5V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

I-PAK
Series

-
Rds On (Max) @ Id, Vgs

4.7 mOhm @ 30A, 10V
Power Dissipation (Max)

1.33W (Ta), 60W (Tc)
Packaging

Tube
Package / Case

TO-251-3 Stub Leads, IPak
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

2241pF @ 12V
Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

25V
Detailed Description

N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C

13.3A (Ta), 89A (Tc)

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