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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTH027N65S3F_F155
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5252023NTH027N65S3F_F155 ImageAMI Semiconductor / ON Semiconductor

NTH027N65S3F_F155

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Specifications
  • Part Number
    NTH027N65S3F_F155
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 27 MOHM TO247 P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTH027N65S3F_F155.pdf
  • Vgs(th) (Max) @ Id
    5V @ 7.5mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247-3
  • Series
    FRFET®, SuperFET® II
  • Rds On (Max) @ Id, Vgs
    27.4 mOhm @ 35A, 10V
  • Power Dissipation (Max)
    595W (Tc)
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    7690pF @ 400V
  • Gate Charge (Qg) (Max) @ Vgs
    259nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247-3
  • Current - Continuous Drain (Id) @ 25°C
    75A (Tc)

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