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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTHD3101FT1G
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5214370NTHD3101FT1G ImageAMI Semiconductor / ON Semiconductor

NTHD3101FT1G

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Reference Price(In US Dollars)

In stock
1+
$0.51
10+
$0.429
100+
$0.322
500+
$0.236
1000+
$0.182
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Specifications
  • Part Number
    NTHD3101FT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 3.2A CHIPFET
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTHD3101FT1G.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    ChipFET™
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    80 mOhm @ 3.2A, 4.5V
  • Power Dissipation (Max)
    1.1W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    NTHD3101FT1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    41 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    680pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    7.4nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
  • Current - Continuous Drain (Id) @ 25°C
    3.2A (Tj)

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