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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMFS4C10NT1G
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3150323NTMFS4C10NT1G ImageAMI Semiconductor / ON Semiconductor

NTMFS4C10NT1G

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Reference Price(In US Dollars)

In stock
1+
$0.60
10+
$0.505
100+
$0.379
500+
$0.278
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Specifications
  • Part Number
    NTMFS4C10NT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 8.2A SO8FL
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTMFS4C10NT1G.pdf
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    5-DFN (5x6) (8-SOFL)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.95 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    750mW (Ta), 23.6W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerTDFN
  • Other Names
    NTMFS4C10NT1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    44 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    987pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    9.7nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
  • Current - Continuous Drain (Id) @ 25°C
    8.2A (Ta)

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