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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMFS4H013NFT1G
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3128944NTMFS4H013NFT1G ImageAMI Semiconductor / ON Semiconductor

NTMFS4H013NFT1G

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Reference Price(In US Dollars)

In stock
1500+
$3.14
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Specifications
  • Part Number
    NTMFS4H013NFT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 25V 35A SO8FL
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTMFS4H013NFT1G.pdf
  • Vgs(th) (Max) @ Id
    2.1V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    5-DFN (5x6) (8-SOFL)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    0.9 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    2.7W (Ta), 104W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    50 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3923pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    56nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
  • Current - Continuous Drain (Id) @ 25°C
    43A (Ta), 269A (Tc)

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