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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMS4101PR2
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NTMS4101PR2

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Reference Price(In US Dollars)

In stock
2500+
$0.403
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Specifications
  • Part Number
    NTMS4101PR2
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 6.9A 8-SOIC
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    NTMS4101PR2.pdf
  • Vgs(th) (Max) @ Id
    450mV @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SOIC
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    19 mOhm @ 6.9A, 4.5V
  • Power Dissipation (Max)
    1.38W (Tj)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    NTMS4101PR2OS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3200pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 6.9A (Ta) 1.38W (Tj) Surface Mount 8-SOIC
  • Current - Continuous Drain (Id) @ 25°C
    6.9A (Ta)

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