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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMSD6N303R2G
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NTMSD6N303R2G

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Specifications
  • Part Number
    NTMSD6N303R2G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 6A 8-SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTMSD6N303R2G.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SOIC
  • Series
    FETKY™
  • Rds On (Max) @ Id, Vgs
    32 mOhm @ 6A, 10V
  • Power Dissipation (Max)
    2W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    NTMSD6N303R2GOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    950pF @ 24V
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC
  • Current - Continuous Drain (Id) @ 25°C
    6A (Ta)

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