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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVD5806NT4G
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1027617NVD5806NT4G ImageAMI Semiconductor / ON Semiconductor

NVD5806NT4G

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Reference Price(In US Dollars)

In stock
1+
$0.95
10+
$0.835
100+
$0.644
500+
$0.477
1000+
$0.382
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Specifications
  • Part Number
    NVD5806NT4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 40V DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVD5806NT4G.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DPAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    19 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    40W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    NVD5806NT4GOSCT
    SVD5806NT4GOSCT
    SVD5806NT4GOSCT-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    860pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK
  • Current - Continuous Drain (Id) @ 25°C
    33A (Tc)

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