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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVMFS5C430NLAFT1G
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726444NVMFS5C430NLAFT1G ImageAMI Semiconductor / ON Semiconductor

NVMFS5C430NLAFT1G

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Reference Price(In US Dollars)

In stock
1500+
$0.656
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Specifications
  • Part Number
    NVMFS5C430NLAFT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 40V 38A 200A 5DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVMFS5C430NLAFT1G.pdf
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    5-DFN (5x6) (8-SOFL)
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    1.4 mOhm @ 50A, 10V
  • Power Dissipation (Max)
    3.8W (Ta), 110W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN, 5 Leads
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4300pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
  • Current - Continuous Drain (Id) @ 25°C
    38A (Ta), 200A (Tc)

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