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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SBC847BPDW1T1G
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358411SBC847BPDW1T1G ImageAMI Semiconductor / ON Semiconductor

SBC847BPDW1T1G

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Reference Price(In US Dollars)

In stock
3000+
$0.081
6000+
$0.073
15000+
$0.065
30000+
$0.061
75000+
$0.054
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Specifications
  • Part Number
    SBC847BPDW1T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 45V 0.1A SOT-363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SBC847BPDW1T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    Automotive, AEC-Q101
  • Power - Max
    380mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    SBC847BPDW1T1G-ND
    SBC847BPDW1T1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BC847BPD

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