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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > SMBT35200MT1G
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SMBT35200MT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.234
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Specifications
  • Part Number
    SMBT35200MT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 35V 2A 6TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SMBT35200MT1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    35V
  • Vce Saturation (Max) @ Ib, Ic
    310mV @ 20mA, 2A
  • Transistor Type
    PNP
  • Supplier Device Package
    6-TSOP
  • Series
    -
  • Power - Max
    625mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1.5A, 1.5V
  • Current - Collector Cutoff (Max)
    100nA
  • Current - Collector (Ic) (Max)
    2A

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