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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > SPZT651T1G
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3140977SPZT651T1G ImageAMI Semiconductor / ON Semiconductor

SPZT651T1G

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Reference Price(In US Dollars)

In stock
1000+
$0.395
2000+
$0.369
5000+
$0.351
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Specifications
  • Part Number
    SPZT651T1G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 60V 2A SOT223-4
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-223 (TO-261)
  • Series
    -
  • Power - Max
    800mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    SPZT651T1G-ND
    SPZT651T1GOSTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    75MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 60V 2A 75MHz 800mW Surface Mount SOT-223 (TO-261)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    75 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    100nA
  • Current - Collector (Ic) (Max)
    2A
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