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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > UMZ1NT1
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4665660UMZ1NT1 ImageAMI Semiconductor / ON Semiconductor

UMZ1NT1

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Specifications
  • Part Number
    UMZ1NT1
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V 0.2A SOT363
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    UMZ1NT1.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    -
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    UMZ1NT1OS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    114MHz, 142MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 50V 200mA 114MHz, 142MHz 250mW Surface Mount SC-88/SC70-6/SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    2µA
  • Current - Collector (Ic) (Max)
    200mA
  • Base Part Number
    UMZ1N

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