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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NE58219-T1-A
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5092448NE58219-T1-A ImageCEL (California Eastern Laboratories)

NE58219-T1-A

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Specifications
  • Part Number
    NE58219-T1-A
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    TRANSISTOR BIPOLAR .9GHZ 3-SMINI
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NE58219-T1-A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Transistor Type
    NPN
  • Supplier Device Package
    3-SuperMiniMold (19)
  • Series
    -
  • Power - Max
    100mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-75, SOT-416
  • Other Names
    NE58219-T1-ACT
  • Operating Temperature
    125°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    -
  • Frequency - Transition
    5GHz
  • Detailed Description
    RF Transistor NPN 12V 60mA 5GHz 100mW Surface Mount 3-SuperMiniMold (19)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA, 5V
  • Current - Collector (Ic) (Max)
    60mA
  • Base Part Number
    NE58219

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