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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NE85619-T1
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5032372NE85619-T1 ImageCEL (California Eastern Laboratories)

NE85619-T1

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Specifications
  • Part Number
    NE85619-T1
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 1GHZ SMD
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    1.NE85619-T1.pdf
    2.NE85619-T1.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-523
  • Series
    -
  • Power - Max
    100mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-523
  • Other Names
    2SC5006
    NE85619-T1TR
    NE85619-TR
    NE85619TR
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Gain
    6.5dB ~ 12.5dB
  • Frequency - Transition
    4.5GHz
  • Detailed Description
    RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface Mount SOT-523
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 20mA, 10V
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    NE85619

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