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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > UPA812T-T1-A
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UPA812T-T1-A

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Specifications
  • Part Number
    UPA812T-T1-A
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    RF DUAL TRANSISTORS NPN SOT-363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    UPA812T-T1-A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    10V
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    SOT-363
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    1.4dB @ 1GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    12dB
  • Frequency - Transition
    7GHz
  • Detailed Description
    RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Surface Mount SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 7mA, 3V
  • Current - Collector (Ic) (Max)
    65mA

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