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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BU426
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BU426

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Specifications
  • Part Number
    BU426
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    POWER TRANSISTOR NPN TO218
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    375V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 500mA, 2.5A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-218
  • Series
    -
  • Power - Max
    115W
  • Packaging
    Bulk
  • Package / Case
    TO-218-3
  • Operating Temperature
    -
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 375V 6A 115W Through Hole TO-218
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    -
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    6A
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Description: IC DETECTOR VOLT 1.1V CMOS 4SOP

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Description: IC DETECTOR VOLT 4.8V ODRN 4SOP

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Description: IC DETECTOR VOLT 4.7V ODRN 5SSOP

Manufacturers: LAPIS Semiconductor
In stock
BU4246FVE-TR

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Description: IC DETECTOR VOLT 4.6V ODRN 5VSOF

Manufacturers: LAPIS Semiconductor
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Description: IC DETECTOR VOLT 4.6V ODRN 4SOP

Manufacturers: LAPIS Semiconductor
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Description: IC DETECTOR VOLT 1.0V CMOS 4SOP

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BU4309G-TR

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Description: IC DETECTOR VOLT 0.9V CMOS 5SSOP

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Description: IC DETECTOR VOLT 1.0V CMOS 5SSOP

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BU4309F-TR

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Description: IC DETECTOR VOLT 0.9V CMOS 4SOP

Manufacturers: LAPIS Semiconductor
In stock

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