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Home > Products > Integrated Circuits (ICs) > Memory > CY62147GE18-55BVXI
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5405489CY62147GE18-55BVXI ImageCypress Semiconductor

CY62147GE18-55BVXI

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Reference Price(In US Dollars)

In stock
1+
$6.92
10+
$6.369
25+
$6.236
50+
$6.214
100+
$5.575
480+
$5.406
960+
$5.046
1440+
$4.961
Inquiry Online
Specifications
  • Part Number
    CY62147GE18-55BVXI
  • Manufacturer/Brand
    Cypress Semiconductor
  • Stock Quantity
    In stock
  • Description
    IC SRAM 4M PARALLEL 48VFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    CY62147GE18-55BVXI.pdf
  • Write Cycle Time - Word, Page
    55ns
  • Voltage - Supply
    1.65 V ~ 2.2 V
  • Technology
    SRAM - Asynchronous
  • Supplier Device Package
    48-VFBGA (6x8)
  • Series
    MoBL®
  • Packaging
    Tray
  • Package / Case
    48-VFBGA
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Volatile
  • Memory Size
    4Mb (256K x 16)
  • Memory Interface
    Parallel
  • Memory Format
    SRAM
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 55ns 48-VFBGA (6x8)
  • Access Time
    55ns

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