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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2DB1182Q-13
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28140832DB1182Q-13 ImageDiodes Incorporated

2DB1182Q-13

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Reference Price(In US Dollars)

In stock
2500+
$0.142
5000+
$0.133
12500+
$0.124
25000+
$0.114
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Specifications
  • Part Number
    2DB1182Q-13
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 32V 2A TO252
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2DB1182Q-13.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Vce Saturation (Max) @ Ib, Ic
    800mV @ 200mA, 2A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-252
  • Series
    -
  • Power - Max
    10W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    2DB1182Q-13DITR
    2DB1182Q13
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    110MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Surface Mount TO-252
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA, 3V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    2DB1182

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