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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DDTD113EC-7-F
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6991977DDTD113EC-7-F ImageDiodes Incorporated

DDTD113EC-7-F

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Reference Price(In US Dollars)

In stock
1+
$0.33
10+
$0.268
100+
$0.142
500+
$0.093
1000+
$0.064
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Specifications
  • Part Number
    DDTD113EC-7-F
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW SOT23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DDTD113EC-7-F.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SOT-23-3
  • Series
    -
  • Resistor - Emitter Base (R2)
    1 kOhms
  • Resistor - Base (R1)
    1 kOhms
  • Power - Max
    200mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DDTD113EC-7-FDICT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SOT-23-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    33 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA

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