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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > DMMT5551-7-F
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3375444DMMT5551-7-F ImageDiodes Incorporated

DMMT5551-7-F

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Reference Price(In US Dollars)

In stock
3000+
$0.099
6000+
$0.094
15000+
$0.085
30000+
$0.08
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Specifications
  • Part Number
    DMMT5551-7-F
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 160V 0.2A SOT26
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMMT5551-7-F.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 5mA, 50mA
  • Transistor Type
    2 NPN (Dual) Matched Pair
  • Supplier Device Package
    SOT-26
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6
  • Other Names
    DMMT5551-FDITR
    DMMT55517F
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    300MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 160V 200mA 300MHz 300mW Surface Mount SOT-26
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • Current - Collector (Ic) (Max)
    200mA
  • Base Part Number
    DMMT5551

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