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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMN1019USN-13
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6384719DMN1019USN-13 ImageDiodes Incorporated

DMN1019USN-13

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Reference Price(In US Dollars)

In stock
10000+
$0.122
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Specifications
  • Part Number
    DMN1019USN-13
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 12V 9.3A SC59
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN1019USN-13.pdf
  • Vgs(th) (Max) @ Id
    800mV @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-59
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    10 mOhm @ 9.7A, 4.5V
  • Power Dissipation (Max)
    680mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DMN1019USN-13DITR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2426pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    50.6nC @ 8V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.2V, 2.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59
  • Current - Continuous Drain (Id) @ 25°C
    9.3A (Ta)

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