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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMN10H099SFG-7
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1686557DMN10H099SFG-7 ImageDiodes Incorporated

DMN10H099SFG-7

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Reference Price(In US Dollars)

In stock
2000+
$0.275
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Specifications
  • Part Number
    DMN10H099SFG-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 4.2A PWRDI3333
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN10H099SFG-7.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerDI3333-8
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    80 mOhm @ 3.3A, 10V
  • Power Dissipation (Max)
    980mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerWDFN
  • Other Names
    DMN10H099SFG-7DITR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1172pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    25.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8
  • Current - Continuous Drain (Id) @ 25°C
    4.2A (Ta)

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