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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > DMN2022UNS-7
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2170257DMN2022UNS-7 ImageDiodes Incorporated

DMN2022UNS-7

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Reference Price(In US Dollars)

In stock
1+
$0.71
10+
$0.622
100+
$0.48
500+
$0.355
1000+
$0.284
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Specifications
  • Part Number
    DMN2022UNS-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET 2 N-CH 20V POWERDI3333-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN2022UNS-7.pdf
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Supplier Device Package
    PowerDI3333-8
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    10.8 mOhm @ 4A, 4.5V
  • Power - Max
    1.2W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerVDFN
  • Other Names
    DMN2022UNS-7DICT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1870pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    20.3nC @ 4.5V
  • FET Type
    2 N-Channel (Dual) Common Drain
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) Common Drain 20V 10.7A (Ta) 1.2W Surface Mount PowerDI3333-8
  • Current - Continuous Drain (Id) @ 25°C
    10.7A (Ta)

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