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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > DN0150BLP4-7
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6632129DN0150BLP4-7 ImageDiodes Incorporated

DN0150BLP4-7

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Reference Price(In US Dollars)

In stock
3000+
$0.153
6000+
$0.144
15000+
$0.134
30000+
$0.127
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Specifications
  • Part Number
    DN0150BLP4-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 50V 0.1A X1-DFN1006-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DN0150BLP4-7.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Transistor Type
    NPN
  • Supplier Device Package
    X2-DFN1006-3
  • Series
    -
  • Power - Max
    450mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    3-XFDFN
  • Other Names
    DN0150BLP4-7DI
    DN0150BLP4-7DI-ND
    DN0150BLP4-7DITR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    60MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 50V 100mA 60MHz 450mW Surface Mount X2-DFN1006-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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