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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > DSS45160FDB-7
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3501902DSS45160FDB-7 ImageDiodes Incorporated

DSS45160FDB-7

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Reference Price(In US Dollars)

In stock
1+
$0.68
10+
$0.584
100+
$0.436
500+
$0.343
1000+
$0.265
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Specifications
  • Part Number
    DSS45160FDB-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 1A 60V U-DFN2020-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DSS45160FDB-7.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    240mV @ 50mA, 1A / 550mV @ 50mA, 1A
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    U-DFN2020-6 (Type B)
  • Series
    -
  • Power - Max
    405mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-UDFN Exposed Pad
  • Other Names
    DSS45160FDB-7DICT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    175MHz, 65MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 65MHz 405mW Surface Mount U-DFN2020-6 (Type B)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    150 @ 500mA, 2V / 120 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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