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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > LBN150B01-7
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3944670LBN150B01-7 ImageDiodes Incorporated

LBN150B01-7

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Reference Price(In US Dollars)

In stock
3000+
$0.13
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Specifications
  • Part Number
    LBN150B01-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 40V 0.2A SOT26
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    LBN150B01-7.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SOT-26
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6
  • Other Names
    1034-LBN150B01DITR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 250MHz 300mW Surface Mount SOT-26
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 100mA, 1V / 32 @ 100mA, 1V
  • Current - Collector Cutoff (Max)
    50nA
  • Current - Collector (Ic) (Max)
    200mA

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