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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > MMDT4146-7
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1143922MMDT4146-7 ImageDiodes Incorporated

MMDT4146-7

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Reference Price(In US Dollars)

In stock
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$0.54
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Specifications
  • Part Number
    MMDT4146-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 25V 0.2A SOT363
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    MMDT4146-7.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    SOT-363
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    MMDT4146
    MMDT4146CT
    MMDT4146CT-ND
    MMDT4146DICT
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    300MHz, 250MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 25V 200mA 300MHz, 250MHz 200mW Surface Mount SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA, 1V
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • Current - Collector (Ic) (Max)
    200mA
  • Base Part Number
    MMDT4146

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