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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > MMDT3946FL3-7
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4681250MMDT3946FL3-7 ImageDiodes Incorporated

MMDT3946FL3-7

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Reference Price(In US Dollars)

In stock
1+
$0.46
10+
$0.34
100+
$0.193
500+
$0.127
1000+
$0.098
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Specifications
  • Part Number
    MMDT3946FL3-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 40V 200MA 6DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MMDT3946FL3-7.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Transistor Type
    NPN, PNP Complementary
  • Supplier Device Package
    X2-DFN1310-6
  • Series
    -
  • Power - Max
    370mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-XFDFN
  • Other Names
    MMDT3946FL3-7DICT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    300MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP Complementary 40V 200mA 300MHz 370mW Surface Mount X2-DFN1310-6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA, 1V
  • Current - Collector Cutoff (Max)
    50nA
  • Current - Collector (Ic) (Max)
    200mA

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