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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMC4N-7
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2831819UMC4N-7 ImageDiodes Incorporated

UMC4N-7

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Reference Price(In US Dollars)

In stock
3000+
$0.153
6000+
$0.144
15000+
$0.134
30000+
$0.127
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Specifications
  • Part Number
    UMC4N-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS SOT353
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    UMC4N-7.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-353
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    47 kOhms, 10 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Other Names
    UMC4N-7-ND
    UMC4N-7DITR
    UMC4N7
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    MC4

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