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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMC5NQ-7
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226206UMC5NQ-7 ImageDiodes Incorporated

UMC5NQ-7

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Reference Price(In US Dollars)

In stock
3000+
$0.076
6000+
$0.068
15000+
$0.061
30000+
$0.057
75000+
$0.05
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Specifications
  • Part Number
    UMC5NQ-7
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    PREBIASTRANSISTORSOT353
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    -
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-353
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    47 kOhms
  • Power - Max
    290mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Other Names
    UMC5NQ-7DITR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 290mW Surface Mount SOT-353
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA
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