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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMG4N-7
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4576479UMG4N-7 ImageDiodes Incorporated

UMG4N-7

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Reference Price(In US Dollars)

In stock
3000+
$0.169
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Specifications
  • Part Number
    UMG4N-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.15W SOT353
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    UMG4N-7.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-353
  • Series
    -
  • Resistor - Emitter Base (R2)
    -
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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