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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > ZX3CD3S1M832TA
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4153951ZX3CD3S1M832TA ImageDiodes Incorporated

ZX3CD3S1M832TA

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Specifications
  • Part Number
    ZX3CD3S1M832TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 40V 3A 8-MLP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZX3CD3S1M832TA.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    370mV @ 250mA, 2.5A
  • Transistor Type
    PNP + Diode (Isolated)
  • Supplier Device Package
    8-MLP (3x2)
  • Series
    -
  • Power - Max
    3W
  • Packaging
    Original-Reel®
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    ZX3CD3S1M832DKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    190MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP + Diode (Isolated) 40V 3A 190MHz 3W Surface Mount 8-MLP (3x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 1.5A, 2V
  • Current - Collector Cutoff (Max)
    25nA
  • Current - Collector (Ic) (Max)
    3A
  • Base Part Number
    ZX3CD3S1M832

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