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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > ZX3CD1S1M832TA
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ZX3CD1S1M832TA

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Reference Price(In US Dollars)

In stock
1+
$1.22
10+
$1.09
100+
$0.85
500+
$0.702
1000+
$0.554
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Specifications
  • Part Number
    ZX3CD1S1M832TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 12V 4A 3X2MM 8MLP
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    ZX3CD1S1M832TA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 150mA, 4A
  • Transistor Type
    PNP + Diode (Isolated)
  • Supplier Device Package
    8-MLP (2x3)
  • Series
    -
  • Power - Max
    3W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    ZX3CD1S1M832TACT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    110MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP + Diode (Isolated) 12V 4A 110MHz 3W Surface Mount 8-MLP (2x3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 2.5A, 2V
  • Current - Collector Cutoff (Max)
    25nA
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    ZX3CD1S1M832

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