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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > ZXMNS3BM832TA
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6081497ZXMNS3BM832TA ImageDiodes Incorporated

ZXMNS3BM832TA

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Specifications
  • Part Number
    ZXMNS3BM832TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 2A 8-MLP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXMNS3BM832TA.pdf
  • Vgs(th) (Max) @ Id
    700mV @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-MLP, MicroFET (3x2)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    180 mOhm @ 1.5A, 4.5V
  • Power Dissipation (Max)
    1W (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    ZXMNS3BM832DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    314pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    2.9nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 2A (Ta) 1W (Ta) Surface Mount 8-MLP, MicroFET (3x2)
  • Current - Continuous Drain (Id) @ 25°C
    2A (Ta)

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